Microsemi 2N6339

Overview

The 2N6338G is Bipolar Transistors - BJT 25A 100V 200W NPN, that includes 2N6338 Series, they are designed to operate with a Tray Packaging, Unit Weight is shown on datasheet note for use in a 0.006349 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SMB, as well as the Single Configuration, the device can also be used as 200 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device has a 100 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 1.8 V, and Collector Base Voltage VCBO is 120 V, and the Emitter Base Voltage VEBO is 6 V, and Maximum DC Collector Current is 25 A, and the Gain Bandwidth Product fT is 40 MHz, and Continuous Collector Current is 25 A, and the DC Collector Base Gain hfe Min is 50.

2N6338 with circuit diagram manufactured by MOT. The 2N6338 is available in MODULE Package, is part of the Module, Bipolar (BJT) Transistor NPN 100V 25A 40MHz 200W Through Hole TO-3, Trans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3, Bipolar Transistors - BJT NPN Transistor.

Features

a transition frequency of 40MHz

Bulk Package

Applications

There are a lot of Microsemi Corporation
2N6339 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting