Microsemi 2N6274

NPN50 A100 V

Overview

High-Power NPN Silicon Transistors   . . . designed for use in industrialmilitary power amplifier and switching circuit applications.    High Collector Emitter Sustaining                   VCEO(sus) = 100 Vdc (Min) 2N6274                                      = 120 Vdc (Min) 2N6275                                      = 150 Vdc (Min) 2N6277 High DC Current Gain                    hFE = 30120 @ IC = 20 Adc                           = 10 (Min) @ IC = 50 Adc Low CollectorEmitter Saturation Voltage                    VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc Fast Switching Times @ IC 20 Adc                    tr = 0.35 ms (Max)                    ts = 0.8 ms (Max)                    tf = 0.25 ms (Max) Complement to 2N637779   

Features

Bulk Package
NPN Transistor Type
50 A Current - Collector (Ic) (Max)
100 V Voltage - Collector Emitter Breakdown (Max)
3V @ 10A, 50A Vce Saturation (Max) @ Ib, Ic
50µA Current - Collector Cutoff (Max)
50 @ 1A, 4V DC Current Gain (hFE) (Min) @ Ic, Vce
250 W Power - Max
Through Hole Mounting Type