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2N6212

Microsemi 2N6212

PNP2 A300 V

比较
2N6212
PNP POWER TRANSISTOR SILICON AMP
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¥8.48

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The 2N6211 is Bipolar Transistors - BJT PNP Transistor, that includes Through Hole Mounting Style, they are designed to operate with a Single Configuration, Package Case is shown on datasheet note for use in a TO-66-2, it has an Maximum Operating Temperature range of + 200 C, Collector Emitter Voltage VCEO Max is designed to work in - 225 V, as well as the PNP Transistor Polarity, the device can also be used as - 1.4 V Collector Emitter Saturation Voltage. In addition, the Collector Base Voltage VCBO is - 275 V, the device is offered in - 6 V Emitter Base Voltage VEBO, the device has a - 2 A of Maximum DC Collector Current.

2N6205 with circuit diagram manufactured by CTC. The 2N6205 is available in MODULE Package, is part of the Module.

Features

Bulk Package

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
2N6212 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: PNP
集电极电流 (Ic)(最大值): 2 A
最大集电极-发射极击穿电压: 300 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 1.6V @ 125mA,1A
电流 - 集电极截止(最大值): 5mA
直流电流增益 (hFE) 最小值 @ Ic、Vce: 30 @ 1A,5V
最大功率: 3 W
工作温度: -55°C ~ 200°C
安装类型: 通孔
封装/外壳: TO-213AA,TO-66-2
供应商器件封装: TO-66(TO-213AA)
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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