Microsemi 2N4857UB

40 V40 Ohms3-SMD，无引线

Overview

The 1N483BTR is DIODE GEN PURP 80V 200MA DO35, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a DO-204AH, DO-35, Axial Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as DO-35, Speed is designed to work in Small Signal =, as well as the Standard Diode Type, the device can also be used as 25nA @ 60V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1V @ 100mA, the device is offered in 80V Voltage DC Reverse Vr Max, the device has a 200mA of Current Average Rectified Io, it has an Operating Temperature Junction range of 175°C (Max).

1N483BUR with EDA / CAD Models, that includes Surface Mount Mounting Type, they are designed to operate with a Standard Diode Type, Speed is shown on datasheet note for use in a Small Signal =, that offers Package Case features such as DO-213AA, Packaging is designed to work in Bulk, it has an Operating Temperature Junction range of -65°C ~ 175°C, the device can also be used as 50mA Current Average Rectified Io. In addition, the Current Reverse Leakage Vr is 25nA @ 225V, the device is offered in 225V Voltage DC Reverse Vr Max, the device has a 1V @ 100mA of Voltage Forward Vf Max If.

Features

Bulk Package
40 V Voltage - Breakdown (V(BR)GSS)
40 V Drain to Source Voltage (Vdss)
100 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
6 V @ 500 pA Voltage - Cutoff (VGS off) @ Id
18pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
40 Ohms Resistance - RDS(On)
360 mW Power - Max
Surface Mount Mounting Type