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2N4093UB

Microsemi 2N4093UB

40 V80 Ohms3-SMD,无引线

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2N4093UB
JFET N-CH 40V 3UB
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¥313.17

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The 1N4056 is DIODE GEN PURP 1KV 275A DO205, that includes Bulk Packaging, they are designed to operate with a DO-205AB, DO-9, Stud Package Case, Mounting Type is shown on datasheet note for use in a Chassis, Stud Mount, that offers Supplier Device Package features such as DO-205AB, DO-9, Speed is designed to work in Standard Recovery >500ns, > 200mA (Io), as well as the Standard Diode Type, the device can also be used as 12mA @ 1000V Current Reverse Leakage Vr. In addition, the Voltage DC Reverse Vr Max is 1000V (1kV), the device is offered in 275A Current Average Rectified Io, it has an Operating Temperature Junction range of -65°C ~ 190°C.

1N4069AN with EDA / CAD Models manufactured by DIP-14. The 1N4069AN is available in DIP-14 Package, is part of the IC Chips.

Features

Bulk Package
40 V Voltage - Breakdown (V(BR)GSS)
40 V Drain to Source Voltage (Vdss)
8 mA @ 20 V Current - Drain (Idss) @ Vds (Vgs=0)
16pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
80 Ohms Resistance - RDS(On)
360 mW Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
FET 类型: N 通道
击穿电压(栅极-源极-源极): 40 V
漏源电压(Vdss): 40 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 8 mA @ 20 V
Vds 时的最大输入电容 (Ciss): 16pF @ 20V
国内抵制: 80 Ohms
最大功率: 360 mW
工作温度: -65°C ~ 175°C(TJ)
安装类型: 表面贴装型
封装/外壳: 3-SMD,无引线
供应商器件封装: 3-UB(3.09x2.45)
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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