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2N3823

Microsemi 2N3823

30 VTO-206AF,TO-72-4 金属罐

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2N3823
JFET N-CH 30V TO72
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¥13.13

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

2N3820_D26Z with pin details, that includes Tape & Reel (TR) Packaging, they are designed to operate with a TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as TO-92-3, FET Type is designed to work in P-Channel, as well as the 350mW Power Max, the device can also be used as 20V Voltage Breakdown V BRGSS. In addition, the Current Drain Idss Vds Vgs=0 is 300μA @ 10V, the device is offered in 8V @ 10μA Voltage Cutoff VGS off Id, the device has a 32pF @ 10V of Input Capacitance Ciss Vds.

The 2N3822 is JFET N Channel Jfet, that includes Through Hole Mounting Style, they are designed to operate with a TO-72 Package Case.

Features

Bulk Package
30 V Voltage - Breakdown (V(BR)GSS)
30 V Drain to Source Voltage (Vdss)
20 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
8 V @ 500 pA Voltage - Cutoff (VGS off) @ Id
6pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
300 mW Power - Max
Through Hole Mounting Type
产品属性
全选
型号系列: Military, MIL-PRF-19500/375
包装: 散装
部件状态: 在售
FET 类型: N 通道
击穿电压(栅极-源极-源极): 30 V
漏源电压(Vdss): 30 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 20 mA @ 15 V
栅极-源极关态电压和漏极电流时的截止电压: 8 V @ 500 pA
Vds 时的最大输入电容 (Ciss): 6pF @ 15V
最大功率: 300 mW
工作温度: -55°C ~ 200°C(TJ)
安装类型: 通孔
封装/外壳: TO-206AF,TO-72-4 金属罐
供应商器件封装: TO-72
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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