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2N3792

Microsemi 2N3792

PNP10 A80 V

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2N3792
TRANS PNP 80V 10A TO3
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¥10.80

价格更新:一个月前

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产品详情

Overview

The 2N3790 is Bipolar Transistors - BJT PNP GP Power, that includes 2N3790 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.225789 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3, as well as the 150000 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 80 V Collector Emitter Voltage VCEO Max, the device has a PNP of Transistor Polarity, and Collector Emitter Saturation Voltage is 1 V, and the Collector Base Voltage VCBO is 80 V, and Emitter Base Voltage VEBO is 7 V, and the Maximum DC Collector Current is 10 A, and Gain Bandwidth Product fT is 4 MHz, and the Continuous Collector Current is 10 A, and DC Collector Base Gain hfe Min is 25 at 3 A 2 V, and the DC Current Gain hFE Max is 25.

The 2N3789 is Bipolar Transistors - BJT PNP GP Power, that includes 60 V Collector Base Voltage VCBO, they are designed to operate with a 1 V Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 60 V, that offers Continuous Collector Current features such as 10 A, DC Collector Base Gain hfe Min is designed to work in 25, as well as the 7 V Emitter Base Voltage VEBO, the device can also be used as 4 MHz Gain Bandwidth Product fT. In addition, the Maximum DC Collector Current is 10 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Mounting Style is Through Hole, and the Package Case is TO-3, and Packaging is Sleeve, and the Pd Power Dissipation is 150 W, and Series is 2N3789, and the Transistor Polarity is PNP, and Unit Weight is 0.225789 oz.

Features

Bulk Package
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 7V
a transition frequency of 4MHz

Through Hole Mounting Type

Applications


There are a lot of Central Semiconductor
2N3792 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: PNP
集电极电流 (Ic)(最大值): 10 A
最大集电极-发射极击穿电压: 80 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 2.5V @ 2A,10A
电流 - 集电极截止(最大值): 5mA
直流电流增益 (hFE) 最小值 @ Ic、Vce: 50 @ 1A,2V
最大功率: 5 W
工作温度: -65°C ~ 200°C(TJ)
安装类型: 通孔
封装/外壳: TO-204AA,TO-3
供应商器件封装: TO-3
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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