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1N649-1

Microsemi 1N649-1

标准600 V400mA

比较
1N649-1
DIODE GEN PURP 600V 400MA DO35
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比较

¥159.94

价格更新:一个月前

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产品详情

Overview

The 1N6484-E3/97 is DIODE GEN PURP 1KV 1A DO213AB, that includes SUPERECTIFIERR Series, they are designed to operate with a Standard Recovery Rectifiers Product, Packaging is shown on datasheet note for use in a Tape & Reel (TR) Alternate Packaging, that offers Unit Weight features such as 0.004762 oz, Mounting Style is designed to work in SMD/SMT, as well as the DO-213AB, MELF (Glass) Package Case, the device can also be used as Surface Mount Mounting Type. In addition, the Supplier Device Package is DO-213AB, the device is offered in Single Configuration, the device has a Standard Recovery >500ns, > 200mA (Io) of Speed, and Diode Type is Standard, and the Current Reverse Leakage Vr is 10μA @ 1000V, and Voltage Forward Vf Max If is 1.1V @ 1A, and the Voltage DC Reverse Vr Max is 1000V (1kV), and Current Average Rectified Io is 1A, and the Capacitance Vr F is 8pF @ 4V, 1MHz, it has an Operating Temperature Junction range of -65°C ~ 175°C, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 65 C, and the Vf Forward Voltage is 1.1 V, and Vr Reverse Voltage is 1000 V, and the Ir Reverse Current is 10 uA, and If Forward Current is 1 A, and the Max Surge Current is 30 A.

The 1N6485US is Zener Diodes Zener Voltage Regulator Diode, that includes SMD/SMT Mounting Style, they are designed to operate with a Bulk Packaging.

Features

Bulk Package
0.4A is the maximum value

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
1N649-1 applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 600 V
平均整流电流 (Io): 400mA
正向电流时的最大正向电压: 1 V @ 400 mA
速度: 标准恢复 >500ns,> 200mA(Io)
不同 Vr 时电流 - 反向泄漏: 50 nA @ 600 V
安装类型: 通孔
封装/外壳: DO-204AH,DO-35,轴向
供应商器件封装: DO-35
结点工作温度: -65°C ~ 175°C
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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