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1N5283-1

Microsemi 1N5283-1

100V242µA

比较
1N5283-1
DIODE CUR REG 100V 242UA 500MW
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¥103.03

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The 1N5282 is DIODE GEN PURP 80V 200MA DO35, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a DO-204AH, DO-35, Axial Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as DO-35, Speed is designed to work in Small Signal =, as well as the Standard Diode Type, the device can also be used as 100nA @ 55V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 900mV @ 100mA, the device is offered in 80V Voltage DC Reverse Vr Max, the device has a 200mA of Current Average Rectified Io, and Reverse Recovery Time trr is 4ns, and the Capacitance Vr F is 2.5pF @ 0V, 1MHz, it has an Operating Temperature Junction range of 175°C (Max).

1N5281BUR-1 with EDA / CAD Models manufactured by Microsemi. is part of the Diodes - Zener - Single, , and with support for Zener Diodes Zener Voltage Regulator Diode, Zener Diode.

Features

Bulk Package
100V Voltage - Anode - Cathode (Vak)(Max)
242µA Regulator Current (Max)
1V Voltage - Limiting (Max)
500mW Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
阳极和阴极最大电压: 100V
最大稳压器电流: 242µA
最大限制电压: 1V
最大功率: 500mW
工作温度: -65°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: DO-204AA,DO-7,轴向
供应商器件封装: DO-7
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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