Vishay Siliconix 2N4416A

35 VTO-206AF，TO-72-4 金属罐

Overview

The 2N4416 is JFET N-CH 30V 0.3W TO-206AF, that includes 2N4416 Series, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-206AF, TO-72-4 Metal Can, Technology is designed to work in Si, as well as the Through Hole Mounting Type, the device can also be used as TO-206AF (TO-72) Supplier Device Package. In addition, the Configuration is Single, the device is offered in N-Channel FET Type, the device has a 300mW of Power Max, and Voltage Breakdown V BRGSS is 30V, and the Current Drain Idss Vds Vgs=0 is 5mA @ 15V, and Voltage Cutoff VGS off Id is 3V @ 1nA, and the Input Capacitance Ciss Vds is 4pF @ 15V, and Pd Power Dissipation is 300 mW, and the Id Continuous Drain Current is 1 nA, and Vds Drain Source Breakdown Voltage is 15 V, and the Transistor Polarity is N-Channel, and Forward Transconductance Min is 4000 uS, and the Vgs Gate Source Breakdown Voltage is - 30 V, and Gate Source Cutoff Voltage is - 6 V.

The 2N4407 is Bipolar Transistors - BJT Bipolar 80V PNP 2.0A 8.75W 50pF Trans, that includes Bulk Packaging, they are designed to operate with a BK Part Aliases, Series is shown on datasheet note for use in a 2N4407.

Features

Bulk Package
35 V Voltage - Breakdown (V(BR)GSS)
5 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
2.5 V @ 1 nA Voltage - Cutoff (VGS off) @ Id
4pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
300 mW Power - Max
Through Hole Mounting Type