
ON SMUN5314DW1T1G
100mA47 千欧
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¥0.37
价格更新:一个月前博斯克质量保证







Overview
The SMUN5313DW1T1G is TRANS NPN/PNP PREBIAS SOT363, that includes MUN5313DW1 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Surface Mount Mounting Type, the device can also be used as SC-88/SC70-6/SOT-363 Supplier Device Package. In addition, the Configuration is Dual, the device is offered in 187mW Power Max, the device has a 1 NPN, 1 PNP - Pre-Biased (Dual) of Transistor Type, and Current Collector Ic Max is 100mA, and the Voltage Collector Emitter Breakdown Max is 50V, and Resistor Base R1 Ohms is 47k, and the Resistor Emitter Base R2 Ohms is 47k, and DC Current Gain hFE Min Ic Vce is 80 @ 5mA, 10V, and the Vce Saturation Max Ib Ic is 250mV @ 300μA, 10mA, and Current Collector Cutoff Max is 500nA, and the Pd Power Dissipation is 187 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN PNP, and Continuous Collector Current is 0.1 A, and the DC Collector Base Gain hfe Min is 80, and Typical Input Resistor is 47 kOhms, and the Typical Resistor Ratio is 1.
SMUN5313DW1T3G with circuit diagram, that includes 500nA Current Collector Cutoff Max, they are designed to operate with a 100mA Current Collector Ic Max, DC Current Gain hFE Min Ic Vce is shown on datasheet note for use in a 80 @ 5mA, 10V, that offers Mounting Type features such as Surface Mount, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Tape & Reel (TR) Packaging, the device can also be used as 187mW Power Max. In addition, the Resistor Base R1 Ohms is 47k, the device is offered in 47k Resistor Emitter Base R2 Ohms, the device has a MUN5313DW1 of Series, and Supplier Device Package is SOT-363, and the Transistor Type is 1 NPN, 1 PNP - Pre-Biased (Dual), and Vce Saturation Max Ib Ic is 250mV @ 300μA, 10mA, and the Voltage Collector Emitter Breakdown Max is 50V.
Features
Tape & Reel (TR) Package100mA Current - Collector (Ic) (Max)
50V Voltage - Collector Emitter Breakdown (Max)
10kOhms Resistor - Base (R1)
47kOhms Resistor - Emitter Base (R2)
80 @ 5mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce
250mV @ 300µA, 10mA Vce Saturation (Max) @ Ib, Ic
500nA Current - Collector Cutoff (Max)
187mW Power - Max
Surface Mount Mounting Type
- 起步价为$40,南非、巴西、印度、巴基斯坦、以色列等国家的价格会有所变动,详情请咨询相关客服人员。
- 包裹重量≤0.5kg的基本运费根据时区和国家而定。
- 我们的产品目前使用DHL,顺丰和UPS运输。如果数量少,则选择联邦快递。
- 一旦发货,预期交货时间跟选择的运输方式有所变动。
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onsemi
onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。
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