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SMUN5214DW1T1G

ON SMUN5214DW1T1G

100mA47 千欧

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onsemi
SMUN5214DW1T1G
TRANS 2NPN PREBIAS 0.187W SOT363
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¥12.72

价格更新:一个月前

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产品详情

Overview

The SMUN5213DW1T1G is TRANS 2NPN PREBIAS 0.187W SOT363, that includes MUN5213DW1 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Package Case is shown on datasheet note for use in a 6-TSSOP, SC-88, SOT-363, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in SC-88/SC70-6/SOT-363, as well as the 187mW Power Max, the device can also be used as 2 NPN - Pre-Biased (Dual) Transistor Type. In addition, the Current Collector Ic Max is 100mA, the device is offered in 50V Voltage Collector Emitter Breakdown Max, the device has a 47k of Resistor Base R1 Ohms, and Resistor Emitter Base R2 Ohms is 47k, and the DC Current Gain hFE Min Ic Vce is 80 @ 5mA, 10V, and Vce Saturation Max Ib Ic is 250mV @ 300μA, 10mA, and the Current Collector Cutoff Max is 500nA.

The SMUN5213T1G is Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR, that includes 50 V Collector Emitter Voltage VCEO Max, they are designed to operate with a Single Configuration, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, Mounting Style is designed to work in SMD/SMT, as well as the SC-70 Package Case, the device can also be used as Reel Packaging. In addition, the Peak DC Collector Current is 100 mA, the device is offered in MUN5213 Series, the device has a NPN of Transistor Polarity, and Typical Input Resistor is 47 kOhms, and the Typical Resistor Ratio is 1, and Unit Weight is 0.000988 oz.

Features

Tape & Reel (TR) Package
100mA Current - Collector (Ic) (Max)
50V Voltage - Collector Emitter Breakdown (Max)
10kOhms Resistor - Base (R1)
47kOhms Resistor - Emitter Base (R2)
80 @ 5mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce
250mV @ 300µA, 10mA Vce Saturation (Max) @ Ib, Ic
500nA Current - Collector Cutoff (Max)
187mW Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
晶体管类型: 2 个 NPN 预偏压式(双)
集电极电流 (Ic)(最大值): 100mA
最大集电极-发射极击穿电压: 50V
基极电阻器 (R1): 10 千欧
发射器基极电阻器 (R2): 47 千欧
直流电流增益 (hFE) 最小值 @ Ic、Vce: 80 @ 5mA,10V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 250mV @ 300µA,10mA
电流 - 集电极截止(最大值): 500nA
最大功率: 187mW
安装类型: 表面贴装型
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商器件封装: SC-88/SC70-6/SOT-363
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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