ON NTMFD4901NFT1G

MOSFET（金属氧化物）逻辑电平门2 个 N 通道（双），肖特基30V10.3A，17.9A6.5 毫欧 @ 10A，10V2.2V @ 250µA

Overview

Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
10.3A, 17.9A Current - Continuous Drain (Id) @ 25°C
6.5mOhm @ 10A, 10V Rds On (Max) @ Id, Vgs
2.2V @ 250µA Vgs(th) (Max) @ Id
9.7nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1150pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
1.1W, 1.2W Power - Max
Surface Mount Mounting Type

Applications

Co-packaged power stage solution to minimize board space

Low side MOSFET with integrated Schottky

Minimized parasitic inductances

Small footprint (5mm x 6mm) for compact design

Low RDS(on) to minimize conduction losses

 

NTMFD4901NFT1G     Applications

DC-DC converters

System voltage rails

Point-of-load