ON NTMD3P03R2G

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）30V2.34A85 毫欧 @ 3.05A，10V2.5V @ 250µA

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
2.34A Current - Continuous Drain (Id) @ 25°C
85mOhm @ 3.05A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
25nC @ 10V Gate Charge (Qg) (Max) @ Vgs
750pF @ 24V Input Capacitance (Ciss) (Max) @ Vds
730mW Power - Max
Surface Mount Mounting Type

Applications

? High Efficiency Components in a Dual SOIC?8 Package

? High Density Power MOSFET with Low RDS(on)

? Miniature SOIC?8 Surface Mount Package ? Saves Board Space

? Diode Exhibits High Speed with Soft Recovery

? IDSS Specified at Elevated Temperature

? Avalanche Energy Specified

? Mounting Information for the SOIC?8 Package is Provided

? AEC?Q101 Qualified ? NVMD3P03R2G

? These Devices are Pb?Free and are RoHS Compliant

NTMD3P03R2G    Applications

? DC?DC Converters

? Low Voltage Motor Control

? Power Management in Portable and Battery?Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones