联系我们
中文
NSVMUN5212DW1T1G

ON NSVMUN5212DW1T1G

100mA22 千欧

比较
onsemi
NSVMUN5212DW1T1G
TRANS 2NPN PREBIAS 0.25W SOT363
paypalvisamastercarddiscover
upsdhlsf
比较

¥2.81

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

NSVMUN5137DW1T1G with pin details, that includes MUN5137DW1 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 6-TSSOP, SC-88, SOT-363, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in SC-88/SC70-6/SOT-363, as well as the 250mW Power Max, the device can also be used as 2 PNP - Pre-Biased (Dual) Transistor Type. In addition, the Current Collector Ic Max is 100mA, the device is offered in 50V Voltage Collector Emitter Breakdown Max, the device has a 47k of Resistor Base R1 Ohms, and Resistor Emitter Base R2 Ohms is 22k, and the DC Current Gain hFE Min Ic Vce is 80 @ 5mA, 10V, and Vce Saturation Max Ib Ic is 250mV @ 300μA, 10mA, and the Current Collector Cutoff Max is 500nA.

NSVMUN5211DW1T3G with circuit diagram, that includes 500nA Current Collector Cutoff Max, they are designed to operate with a 100mA Current Collector Ic Max, DC Current Gain hFE Min Ic Vce is shown on datasheet note for use in a 35 @ 5mA, 10V, that offers Mounting Type features such as Surface Mount, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Tape & Reel (TR) Packaging, the device can also be used as 250mW Power Max. In addition, the Resistor Base R1 Ohms is 10k, the device is offered in 10k Resistor Emitter Base R2 Ohms, the device has a SC-88/SC70-6/SOT-363 of Supplier Device Package, and Transistor Type is 2 NPN - Pre-Biased (Dual), and the Vce Saturation Max Ib Ic is 250mV @ 300μA, 10mA, and Voltage Collector Emitter Breakdown Max is 50V.

Features

Tape & Reel (TR) Package
100mA Current - Collector (Ic) (Max)
50V Voltage - Collector Emitter Breakdown (Max)
22kOhms Resistor - Base (R1)
22kOhms Resistor - Emitter Base (R2)
60 @ 5mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce
250mV @ 300µA, 10mA Vce Saturation (Max) @ Ib, Ic
500nA Current - Collector Cutoff (Max)
250mW Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
晶体管类型: 2 个 NPN 预偏压式(双)
集电极电流 (Ic)(最大值): 100mA
最大集电极-发射极击穿电压: 50V
基极电阻器 (R1): 22 千欧
发射器基极电阻器 (R2): 22 千欧
直流电流增益 (hFE) 最小值 @ Ic、Vce: 60 @ 5mA,10V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 250mV @ 300µA,10mA
电流 - 集电极截止(最大值): 500nA
最大功率: 250mW
安装类型: 表面贴装型
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商器件封装: SC-88/SC70-6/SOT-363
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z