ON NSV60601MZ4T3G

NPN6 A60 V

Overview

The NSV60600MZ4T1G is TRANS PNP 60V 6A SOT223-4, that includes NSS60600 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006632 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-261-4, TO-261AA, as well as the Surface Mount Mounting Type, the device can also be used as SOT-223-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in 800mW Power Max, the device has a PNP of Transistor Type, and Current Collector Ic Max is 6A, and the Voltage Collector Emitter Breakdown Max is 60V, and DC Current Gain hFE Min Ic Vce is 120 @ 1A, 2V, and the Vce Saturation Max Ib Ic is 350mV @ 600mA, 6A, and Current Collector Cutoff Max is 100nA (ICBO), and the Frequency Transition is 100MHz, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is - 60 V, and Transistor Polarity is PNP, and the Collector Emitter Saturation Voltage is - 0.1 V, and Collector Base Voltage VCBO is - 100 V, and the Emitter Base Voltage VEBO is - 6 V, and Maximum DC Collector Current is - 12 A, and the Gain Bandwidth Product fT is 100 MHz, and DC Collector Base Gain hfe Min is 120 at - 1 A at - 2 V, and the DC Current Gain hFE Max is 360 at - 1 A at - 2 V.

The NSV60600MZ4T3G is Bipolar Transistors - BJT PNP LOW VCE(SAT), that includes Reel Packaging, they are designed to operate with a NSS60600 Series, Transistor Polarity is shown on datasheet note for use in a PNP.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 300mV @ 600mA, 6A
a transition frequency of 100MHz

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
NSV60601MZ4T3G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting