ON NGTB40N120FL3WG

1200 V160 A1.6mJ（开），1.1mJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Ultra Field Stop IGBT -1200V 40A

Features

Extremely Efficient Trench with Ultra Field Stop Technology

TJmax = 175°C

Soft Fast Reverse Recovery Diode

Optimized for High-Speed Switching

These are Pb?Free Devices

Applications

Solar Inverter

Uninterruptible Power Inverter Supplies (UPS)

Welding

Industrial Applications

Automobiles