ST STGB30H60DFB

600 V60 A383µJ（开），293µJ（关）-55°C ~ 175°C（TJ）TO-263-3，D²Pak（2 引线 + 接片），TO-263AB

Overview

STMicroelectronics HB Series Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These new HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

Tape & Reel (TR) Package
Trench Field Stop IGBT Type
600 V Voltage - Collector Emitter Breakdown (Max)
60 A Current - Collector (Ic) (Max)
120 A Current - Collector Pulsed (Icm)
2V @ 15V, 30A Vce(on) (Max) @ Vge, Ic
260 W Power - Max
383µJ (on), 293µJ (off) Switching Energy
Standard Input Type
149 nC Gate Charge
37ns/146ns Td (on/off) @ 25°C
400V, 30A, 10Ohm, 15V Test Condition
53 ns Reverse Recovery Time (trr)
Surface Mount Mounting Type