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ISL9R860S3ST

ON ISL9R860S3ST

标准600 V8A

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onsemi
ISL9R860S3ST
DIODE GEN PURP 600V 8A D2PAK
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¥52.00

价格更新:一个月前

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产品详情

Overview

The ISL9R860PF2 is DIODE GEN PURP 600V 8A TO220F, that includes Stealth? Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-220-2 Full Pack, Isolated Tab, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in TO-220F-2L, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 100μA @ 600V, the device is offered in 2.4V @ 8A Voltage Forward Vf Max If, the device has a 600V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 8A, and the Reverse Recovery Time trr is 30ns, it has an Operating Temperature Junction range of -55°C ~ 150°C.

ISL9R860S3S with circuit diagram manufactured by FAIRCHILD. The ISL9R860S3S is available in TO-263 Package, is part of the Diodes, Rectifiers - Single.

Features

Stealth™ Series
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 100μA

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
ISL9R860S3ST applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
型号系列: Stealth™
包装: 卷带(TR)
部件状态: 停产
技术: 标准
最大直流反向电压: 600 V
平均整流电流 (Io): 8A
正向电流时的最大正向电压: 2.4 V @ 8 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr): 30 ns
不同 Vr 时电流 - 反向泄漏: 100 µA @ 600 V
安装类型: 表面贴装型
封装/外壳: TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
供应商器件封装: D²PAK(TO-263)
结点工作温度: -55°C ~ 175°C
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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