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ISL9R8120P2

ON ISL9R8120P2

标准1200 V8A

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onsemi
ISL9R8120P2
DIODE GEN PURP 1.2KV 8A TO220-2L
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¥5.35

价格更新:一个月前

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产品详情

Overview

The ISL9R460S3ST is DIODE GEN PURP 600V 4A TO263AB, that includes Stealth? Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in TO-263AB, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 100μA @ 600V, the device is offered in 2.4V @ 4A Voltage Forward Vf Max If, the device has a 600V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 4A, and the Reverse Recovery Time trr is 22ns, it has an Operating Temperature Junction range of -55°C ~ 175°C.

ISL9R8120 with circuit diagram manufactured by FAIRCHILD. The ISL9R8120 is available in TO-220AC Package, is part of the Diodes, Rectifiers - Single.

Features

Stealth™ Series
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 100μA

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
ISL9R8120P2 applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
型号系列: Stealth™
包装: 管件
部件状态: 停产
技术: 标准
最大直流反向电压: 1200 V
平均整流电流 (Io): 8A
正向电流时的最大正向电压: 3.3 V @ 8 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr): 300 ns
不同 Vr 时电流 - 反向泄漏: 100 µA @ 1200 V
Vr 时的电容,F: 30pF @ 10V,1MHz
安装类型: 通孔
封装/外壳: TO-220-2
供应商器件封装: TO-220-2L
结点工作温度: -55°C ~ 150°C
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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