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HUFA76407DK8TF085P

ON HUFA76407DK8TF085P

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)60V3.8A(Ta)90 毫欧 @ 3.8A,10V3V @ 250µA

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HUFA76407DK8TF085P
MOSFET 2N-CH 60V 8-SOIC
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产品详情

Overview

HUFA76407DK8T_F085 with pin details, that includes Automotive, AEC-Q101, UltraFET? Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SOP of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 2.5W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 330pF @ 25V, and FET Feature is Logic Level Gate, and the Rds On Max Id Vgs is 90 mOhm @ 3.8A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 11.2nC @ 10V, and Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Id Continuous Drain Current is 3.5 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 90 mOhms, and Transistor Polarity is N-Channel, and the Channel Mode is Enhancement.

The HUFA76407D3S is MOSFET N-CH 60V 12A DPAK manufactured by FAIRCHILD. The HUFA76407D3S is available in TO-252-3, DPak (2 Leads + Tab), SC-63 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 12A DPAK, N-Channel 60V 12A (Tc) 38W (Tc) Surface Mount TO-252AA, Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) TO-252AA.

Features

UltraFET™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
3.8A (Ta) Current - Continuous Drain (Id) @ 25°C
90mOhm @ 3.8A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
330pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.5W (Ta) Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: UltraFET™
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 60V
25°C 时电流 - 连续漏极 (Id): 3.8A(Ta)
漏极电流和栅极至源极电压下的最大导通电阻: 90 毫欧 @ 3.8A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
Vds 时的最大输入电容 (Ciss): 330pF @ 25V
最大功率: 2.5W(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
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