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FDY4001CZ

ON FDY4001CZ

MOSFET(金属氧化物)逻辑电平门N 和 P 沟道20V200mA,150mA5 欧姆 @ 200mA,4.5V1.5V @ 250µA

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FDY4001CZ
MOSFET N/P-CH 20V SC89-6
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产品详情

Overview

The FDY4000CZ is MOSFET N/P-CH 20V SC89-6, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001129 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-563, SOT-666, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a SC-89-6 of Supplier Device Package, and Configuration is N-Channel P-Channel, and the FET Type is N and P-Channel, and Power Max is 446mW, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 60pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 600mA, 350mA, and Rds On Max Id Vgs is 700 mOhm @ 600mA, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 1.1nC @ 4.5V, and the Pd Power Dissipation is 625 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns 13 ns, and the Rise Time is 8 ns 13 ns, and Vgs Gate Source Voltage is 12 V 8 V, and the Id Continuous Drain Current is 600 mA, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 700 mOhms 1.2 Ohms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 8 ns 8 ns, and Typical Turn On Delay Time is 6 ns 6 ns, and the Forward Transconductance Min is 1.8 S 1 S, and Channel Mode is Enhancement.

FDY302NZ-NL with circuit diagram manufactured by FAIRCHILD. The FDY302NZ-NL is available in SOT-523F3L Package, is part of the IC Chips.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
200mA, 150mA Current - Continuous Drain (Id) @ 25°C
5Ohm @ 200mA, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
1.1nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
60pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
446mW Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: N 和 P 沟道
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 200mA,150mA
漏极电流和栅极至源极电压下的最大导通电阻: 5 欧姆 @ 200mA,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 1.1nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 60pF @ 10V
最大功率: 446mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SOT-563,SOT-666
供应商器件封装: SOT-563F
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