ON FDS8978

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V7.5A18 毫欧 @ 7.5A，10V2.5V @ 250µA

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

? rDS(on) = 18 m, VGS = 10 V, ID = 7.5 A

? rDS(on) = 21 m, VGS = 4.5 V, ID = 6.9 A

? High Performance Trench Technology for Extremely Low rDS(on)

? Low Gate Charge

? High Power and Current Handling Capability

? 100% Rg Tested

? These Devices are Pb?Free and are RoHS Compliant

Applications

FDS8978              Applications

? DC/DC Converters