ON FDS8962C

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V7A，5A30 毫欧 @ 7A，10V3V @ 250µA

Overview

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 

Features

■ Q1: N-Channel

 7.0A, 30V RDS(on) = 0.030? @ VGS = 10V

 RDS(on) = 0.044? @ VGS = 4.5V

■ Q2: P-Channel

 -5A, -30V RDS(on) = 0.052? @ VGS = -10V

 RDS(on) = 0.080? @ VGS = -4.5V

■ Fast switching speed

■ High power and handling capability in a widely used surface

mount package

Applications

low-voltage and battery-powered applications