ON FDS8958B

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V6.4A，4.5A26 毫欧 @ 6.4A，10V3V @ 250µA

Overview

These dual N-and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced Power Trench process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance.

Application ■DC-DC Conversion ■BLU and motor drive inverter

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
6.4A, 4.5A Current - Continuous Drain (Id) @ 25°C
26mOhm @ 6.4A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
12nC @ 10V Gate Charge (Qg) (Max) @ Vgs
540pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type

Applications

 

Q1 N-Channel

Max. RDS(on) = 26 m|? at VGS = 10 V, ID = 6.4 A

Max. RDS(on) = 39 m|? at VGS = 4.5 V, ID = 5.2 A

Q2 P-Channel

Max. RDS(on) = 51 m|? at VGS = -10 V, ID = -4.5 A

Max. RDS(on) = 80 m|? at VGS = -4.5 V, ID = -3.3 A

HBM ESD protection level > 3.5 kV

RoHS Compliant

FDS8958B               Applications

This product is general usage and suitable for many different applications.

DC-DC Conversion

BLU and Motor Drive Inverter