ON FDS6984AS

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V5.5A，8.5A31 毫欧 @ 5.5A，10V3V @ 250µA

Overview

Designed to minimise losses in power conversion, while maintaining excellent switching performanceHigh Performance Trench Technology for extremely low RDS(on)SyncFET™ benefits from an efficient Schottky body diodeApplications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch

Features

Q2

Optimized to minimize conduction losses

Includes SyncFET Schottky diode

8.5A, 30V

Max. RDS(on) = 20 mΩ at VGS = 10 V

Max. RDS(on) = 28 mΩ at VGS = 4.5 V

Q1

Optimized for Low Switching Losses

5.5A, 30V

Max. RDS(on) = 31 mΩ at VGS = 10 V

Max. RDS(on) = 40 mΩ at VGS = 4.5 V

Low gate charge (8nC typical)

RoHS Compliant

Applications

This product is general usage and suitable for many different applications.