ON FDS6961A_F011

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V3.5A90 毫欧 @ 3.5A，10V3V @ 250µA

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
3.5A Current - Continuous Drain (Id) @ 25°C
90mOhm @ 3.5A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
4nC @ 5V Gate Charge (Qg) (Max) @ Vgs
220pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type