ON FDS6812A

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）20V6.7A22 毫欧 @ 6.7A，4.5V1.5V @ 250µA

Overview

The FDS6699S is MOSFET N-CH 30V 21A 8SOIC, that includes PowerTrench SyncFET Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a FDS6699S_NL, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOIC-Narrow-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Quad Drain Triple Source Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 38 ns, and Rise Time is 12 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 21 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 3.6 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 73 ns, and the Typical Turn On Delay Time is 11 ns, and Forward Transconductance Min is 100 S, and the Channel Mode is Enhancement.

FDS6742MR with circuit diagram manufactured by FDS. The FDS6742MR is available in SOP-8 Package, is part of the IC Chips.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
6.7A Current - Continuous Drain (Id) @ 25°C
22mOhm @ 6.7A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
19nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1082pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type