ON FDMD85100

MOSFET（金属氧化物）2 个 N 通道（半桥）100V10.4A9.9m옴 @ 10.4A，10V4V @ 250µA

Overview

This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
100V Drain to Source Voltage (Vdss)
10.4A Current - Continuous Drain (Id) @ 25°C
9.9mOhm @ 10.4A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
31nC @ 10V Gate Charge (Qg) (Max) @ Vgs
2230pF @ 50V Input Capacitance (Ciss) (Max) @ Vds
2.2W Power - Max
Surface Mount Mounting Type
Power56 Supplier Device Package