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FDJ1032C

ON FDJ1032C

MOSFET(金属氧化物)逻辑电平门N 和 P 沟道20V3.2A,2.8A90 毫欧 @ 3.2A,4.5V1.5V @ 250µA

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onsemi
FDJ1032C
MOSFET N/P-CH 20V 3.2A/2.8A SC75
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¥1.82

价格更新:一个月前

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产品详情

Overview

The FDJ1027P is MOSFET 2P-CH 20V 2.8A SC-75, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a SC75-6 FLMP, it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the SC75-6 FLMP Supplier Device Package, the device can also be used as 2 P-Channel (Dual) FET Type. In addition, the Power Max is 900mW, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 290pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 2.8A, and Rds On Max Id Vgs is 160 mOhm @ 2.8A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 4nC @ 4.5V.

FDJ1027P-NL with circuit diagram manufactured by FAIRCHILD. The FDJ1027P-NL is available in SC75-6 Package, is part of the IC Chips.

Features

PowerTrench® Series


  • a low gate fee

  • Extremely low RDS with high performance trench technology (ON)

  • Improved thermal performance in an industry-standard package size: FLMP SC75 package



Surface Mount Mounting Type

Applications


  • Converter for DC/DC

  • Charge switch

  • Motor Vehicle


产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: N 和 P 沟道
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 3.2A,2.8A
漏极电流和栅极至源极电压下的最大导通电阻: 90 毫欧 @ 3.2A,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 3nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 200pF @ 10V
最大功率: 900mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SC-75-6 FLMP
供应商器件封装: SC75-6 FLMP
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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