ON FDG6304P

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）25V410mA1.1 欧姆 @ 410mA，4.5V1.5V @ 250µA

Features

N-Ch 0.22 A, 25 V,

RDS(ON) = 4.0 |? @ VGS= 4.5 V,

RDS(ON) = 5.0 |? @ VGS= 2.7 V

P-Ch -0.41 A,-25V,

RDS(ON) = 1.1 |? @ VGS= -4.5V,

RDS(ON) = 1.5 |? @ VGS= -2.7V.

Very small package outline SC70-6.

Very low level gate drive requirements allowing direct operation in 3 V circuits (V GS(th) < 1.5 V)

Gate-Source Zener for ESD ruggedness (>6k V Human Body Model).

Applications

This product is general usage and suitable for many different applications.