ON FDC8602

MOSFET（金属氧化物）2 N-通道（双）100V1.2A350 毫欧 @ 1.2A，10V4V @ 250µA

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A

Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used surface mount package

Fast switching speed

100% UIL Tested

RoHS Compliant

Applications

Distribution