Fairchild FDC855N

N 通道30 V6.1A（Ta）3V @ 250µA1.6W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing an advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.

Features

Max rDS(on) = 27m? at VGS = 10V, ID = 6.1A

Max rDS(on) = 36m? at VGS = 4.5V, ID = 5.3A

SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick).

RoHS Compliant

Applications

Power Management in Notebook, Hard Disk Drive