ON FDC6432SH

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V，12V2.4A，2.5A90 毫欧 @ 2.4A，10V3V @ 1mA

Overview

FDC642P_F085 with pin details, that includes Reel Packaging, they are designed to operate with a 0.001058 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SSOT-6, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 P-Channel, the device is offered in 1.6 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 35 ns, and Rise Time is 19 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is - 4 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Rds On Drain Source Resistance is 65 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 26 ns, and the Typical Turn On Delay Time is 11 ns, and Forward Transconductance Min is 9 S, and the Channel Mode is Enhancement.

FDC642P-NL with circuit diagram manufactured by FAIRCHLD. The FDC642P-NL is available in SOT163 Package, is part of the IC Chips.

Features

PowerTrench®, SyncFET™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V, 12V Drain to Source Voltage (Vdss)
2.4A, 2.5A Current - Continuous Drain (Id) @ 25°C
90mOhm @ 2.4A, 10V Rds On (Max) @ Id, Vgs
3V @ 1mA Vgs(th) (Max) @ Id
3.5nC @ 5V Gate Charge (Qg) (Max) @ Vgs
270pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
700mW Power - Max
Surface Mount Mounting Type