ON FDC3601N

MOSFET（金属氧化物）2 N-通道（双）100V1A500 毫欧 @ 1A，10V4V @ 250µA

Overview

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

1.0 A, 100 V

RDS(on) = 500 m|?@ VGS = 10 V

RDS(on) = 550 m|? @ VGS = 6 V

Low gate charge (3.7nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT?-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)

Applications

This product is general usage and suitable for many different applications.