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2N4410

ON 2N4410

NPN200 mA80 V

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2N4410
TRANS NPN 80V 0.2A TO92-3
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产品详情

Overview

The 2N4405 is Bipolar Transistors - BJT Small Signal Transistor, that includes 2N4405 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-39, as well as the 1.25 W Pd Power Dissipation, the device can also be used as 80 V Collector Emitter Voltage VCEO Max. In addition, the Transistor Polarity is PNP, the device is offered in 5 V Emitter Base Voltage VEBO, the device has a 600 MHz of Gain Bandwidth Product fT, and Continuous Collector Current is 1 A, and the DC Collector Base Gain hfe Min is 30.

2N4406 with circuit diagram manufactured by MOT. The 2N4406 is available in CAN3 Package, is part of the IC Chips.

Features

Bulk Package
a collector emitter saturation voltage of 200mV
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

Through Hole Mounting Type

Applications


There are a lot of Central Semiconductor
2N4410 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 散装
部件状态: 停产
晶体管类型: NPN
集电极电流 (Ic)(最大值): 200 mA
最大集电极-发射极击穿电压: 80 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 200mV @ 100µA,1mA
电流 - 集电极截止(最大值): 10nA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 60 @ 10mA,1V
最大功率: 625 mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-226-3,TO-92-3 标准主体(!--TO-226AA)
供应商器件封装: TO-92-3
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