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PRLL5819,115

NXP PRLL5819,115

肖特基40 V1A

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NXP USA Inc.
PRLL5819,115
DIODE SCHOTTKY 40V 1A MELF
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¥0.42

价格更新:一个月前

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产品详情

Overview

The PRLL5818,115 is DIODE SCHOTTKY 30V 1A MELF, that includes Digi-ReelR Packaging, they are designed to operate with a SOD-87 Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Supplier Device Package features such as MELF, Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Schottky Diode Type, the device can also be used as 1mA @ 30V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 550mV @ 1A, the device is offered in 30V Voltage DC Reverse Vr Max, the device has a 1A of Current Average Rectified Io, and Capacitance Vr F is 50pF @ 4V, 1MHz, it has an Operating Temperature Junction range of 125°C (Max).

PRLL5819 with circuit diagram manufactured by NXP. The PRLL5819 is available in LL34 Package, is part of the Diodes, Rectifiers - Single.

Features

Tape & Reel (TR) Package
Schottky Technology
40 V Voltage - DC Reverse (Vr) (Max)
1A Current - Average Rectified (Io)
600 mV @ 1 A Voltage - Forward (Vf) (Max) @ If
Fast Recovery =< 500ns, > 200mA (Io) Speed
1 mA @ 40 V Current - Reverse Leakage @ Vr
50pF @ 4V, 1MHz Capacitance @ Vr, F
Surface Mount Mounting Type
MELF Supplier Device Package
125°C (Max) Operating Temperature - Junction
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: 肖特基
最大直流反向电压: 40 V
平均整流电流 (Io): 1A
正向电流时的最大正向电压: 600 mV @ 1 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
不同 Vr 时电流 - 反向泄漏: 1 mA @ 40 V
Vr 时的电容,F: 50pF @ 4V,1MHz
安装类型: 表面贴装型
封装/外壳: SOD-87
供应商器件封装: MELF
结点工作温度: 125°C(最大)
NXP USA Inc.

NXP USA Inc.

NXP USA Inc.是NXP Semiconductors在美国的子公司,负责设计、研发、制造和销售半导体产品。公司在德克萨斯州奥斯汀和亚利桑那州钱德勒设有晶圆制造设施,专注于为汽车、工业和通信市场提供高性能解决方案。

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