NXP PMBF4393,215

40 V100 OhmsTO-236-3，SC-59，SOT-23-3

Overview

Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in aplastic microminiature envelope designed for application in thick and thin-film circuits. Thetransistors are intended for low-power, chopper or switching applications in industrialservice.

Features

Tape & Reel (TR) Package
40 V Voltage - Breakdown (V(BR)GSS)
40 V Drain to Source Voltage (Vdss)
5 mA @ 20 V Current - Drain (Idss) @ Vds (Vgs=0)
500 mV @ 1 nA Voltage - Cutoff (VGS off) @ Id
14pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
100 Ohms Resistance - RDS(On)
250 mW Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type