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MW6S010GMR1

NXP MW6S010GMR1

LDMOS960MHz18dB28 V125 mA10W

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NXP USA Inc.
MW6S010GMR1
FET RF 68V 960MHZ TO270-2GW
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产品详情

Overview

The MW6S004NT1 is MOSFET RF N-CH 28V 4W PLD-1.5, that includes MW6S004NT1 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.009877 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PLD-1.5-3, as well as the Si Technology, the device can also be used as 18 dB at 1.96 GHz Gain. In addition, the Output Power is 4 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Operating Frequency is 2 GHz, and the Vgs Gate Source Voltage is 12 V, and Vds Drain Source Breakdown Voltage is 68 V, and the Vgs th Gate Source Threshold Voltage is 2 V, and Transistor Polarity is N-Channel.

MW6S010 with EDA / CAD Models manufactured by FSL. The MW6S010 is available in MODULE Package, is part of the Module.

Features

Tape & Reel (TR) Package
LDMOS Technology
960MHz Frequency
18dB Gain
28 V Voltage - Test
125 mA Current - Test
10W Power - Output
68 V Voltage - Rated
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: LDMOS
频率: 960MHz
增益: 18dB
测试电压: 28 V
电流 - 测试: 125 mA
输出功率: 10W
额定电压: 68 V
封装/外壳: TO-270BA
供应商器件封装: TO-270-2 鸥翼型
安装类型: 表面贴装型
NXP USA Inc.

NXP USA Inc.

NXP USA Inc.是NXP Semiconductors在美国的子公司,负责设计、研发、制造和销售半导体产品。公司在德克萨斯州奥斯汀和亚利桑那州钱德勒设有晶圆制造设施,专注于为汽车、工业和通信市场提供高性能解决方案。

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