NXP MRFG35010AR5

pHEMT FET3.55GHz10dB12 V140 mA1W

Overview

Gallium Arsenide PHEMT RF Power Field Effect Transistor

• Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts,   IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A   @ 0.01% Probability)      Output Power — 1 Watt      Power Gain — 10 dB      Efficiency — 30%• 10 Watts P1dB @ 3.55 GHz• Excellent Phase Linearity and Group Delay Characteristics• High Gain, High Efficiency and High Linearity

Features

Bulk Package
pHEMT FET Technology
3.55GHz Frequency
10dB Gain
12 V Voltage - Test
140 mA Current - Test
1W Power - Output
15 V Voltage - Rated
Chassis Mount Mounting Type