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MRF6S21050LR5

NXP MRF6S21050LR5

LDMOS2.16GHz16dB28 V450 mA11.5W

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NXP USA Inc.
MRF6S21050LR5
FET RF 68V 2.16GHZ NI-400
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¥14.85

价格更新:一个月前

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产品详情

Overview

The MRF6S20010GNR1 is RF MOSFET Transistors HV6 2GHZ 10W, that includes MRF6S20010N Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.019330 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-270, as well as the Si Technology, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in - 0.5 V 12 V Vgs Gate Source Voltage, the device has a 68 V of Vds Drain Source Breakdown Voltage, and Transistor Polarity is N-Channel.

The MRF6S21050LR3 is MOSFET RF N-CH 28V 11.5W NI-400 manufactured by FREESCALE. The MRF6S21050LR3 is available in NI-400 Package, is part of the RF FETs, , and with support for MOSFET RF N-CH 28V 11.5W NI-400, RF Mosfet LDMOS 28V 450mA 2.16GHz 16dB 11.5W NI-400.

Features

Bulk Package
LDMOS Technology
2.16GHz Frequency
16dB Gain
28 V Voltage - Test
450 mA Current - Test
11.5W Power - Output
68 V Voltage - Rated
产品属性
全选
包装: 散装
部件状态: 在售
技术: LDMOS
频率: 2.16GHz
增益: 16dB
测试电压: 28 V
电流 - 测试: 450 mA
输出功率: 11.5W
额定电压: 68 V
封装/外壳: NI-400
供应商器件封装: NI-400
NXP USA Inc.

NXP USA Inc.

NXP USA Inc.是NXP Semiconductors在美国的子公司,负责设计、研发、制造和销售半导体产品。公司在德克萨斯州奥斯汀和亚利桑那州钱德勒设有晶圆制造设施,专注于为汽车、工业和通信市场提供高性能解决方案。

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