NXP MRF6S20010GNR1

LDMOS2.17GHz15.5dB28 V130 mA10W

Overview

The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

Features

MRF6S20010GNR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF6S20010GNR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6S20010GNR1 has the common source configuration.

Applications

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

MRF6S20010GNR1 Applications

ISM applications

DC large signal applications