NXP MRF6S18100NBR1

LDMOS1.99GHz14.5dB28 V900 mA100W

Overview

The MRF6S18060NR1 is MOSFET RF N-CH 26V 60W TO270-4, that includes MRF6S18060N Series, they are designed to operate with a RF Power MOSFET Type, Packaging is shown on datasheet note for use in a Reel, that offers Unit Weight features such as 0.058073 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-270-4 WB EP Package Case, the device can also be used as Si Technology. In addition, the Gain is 15 dB, the device is offered in 60 W Output Power, the device has a 21.6 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Operating Frequency is 1.8 GHz to 2 GHz, and the Vgs Gate Source Voltage is - 0.5 V + 12 V, and Vds Drain Source Breakdown Voltage is 68 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Transistor Polarity is N-Channel.

The MRF6S18100NB is MOSFET RF N-CH 28V 100W TO2724 manufactured by FREESCALE. The MRF6S18100NB is available in TO-272BB Package, is part of the RF FETs, , and with support for MOSFET RF N-CH 28V 100W TO2724.

Features

Bulk Package
LDMOS Technology
1.99GHz Frequency
14.5dB Gain
28 V Voltage - Test
900 mA Current - Test
100W Power - Output
68 V Voltage - Rated