NXP MRF101AN-START

LDMOS1.8MHz ~ 250MHz21.1dB50 V10µA100 mA115W

Overview

The MRF10120 is TRANS NPN 120W 960MHZ-1215MHZ, that includes Tray Packaging, they are designed to operate with a 355C-02 Package Case, Technology is shown on datasheet note for use in a Si, that offers Mounting Type features such as Chassis Mount, Supplier Device Package is designed to work in 355C-02, Style 1, as well as the Single Configuration, the device can also be used as 120W Power Max. In addition, the Transistor Type is NPN, the device is offered in 15A Current Collector Ic Max, the device has a 55V of Voltage Collector Emitter Breakdown Max, and DC Current Gain hFE Min Ic Vce is 20 @ 5A, 5V, and the Gain is 8.5dB, and Pd Power Dissipation is 380 W, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, and the Operating Frequency is 1.215 GHz, and Collector Emitter Voltage VCEO Max is 55 V, and the Transistor Polarity is NPN, and Emitter Base Voltage VEBO is 3.5 V, and the Continuous Collector Current is 15 A, and DC Collector Base Gain hfe Min is 20.

The MRF10150 is TRANS NPN 150W 1025MHZ-1050MHZ, that includes Tray Packaging, they are designed to operate with a NPN Transistor Type, Mounting Type is shown on datasheet note for use in a Chassis Mount, that offers Voltage Collector Emitter Breakdown Max features such as 65V, Supplier Device Package is designed to work in 376B-02, Style 1, as well as the 376B-02 Package Case, the device can also be used as 20 @ 5A, 5V DC Current Gain hFE Min Ic Vce. In addition, the Power Max is 150W, the device is offered in 14A Current Collector Ic Max, the device has a 10dB of Gain.

Features

Bulk Package
LDMOS Technology
1.8MHz ~ 250MHz Frequency
21.1dB Gain
50 V Voltage - Test
10µA Current Rating (Amps)
100 mA Current - Test
115W Power - Output
133 V Voltage - Rated
Through Hole Mounting Type