NXP MMZ25332BT1

1.8GHz ~ 2.8GHz33dBm26.5dB5.8dB3V ~ 5V

Overview

The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides high linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 22 dBm, covering frequencies from 1500-2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost-effective, surface mount QFN 3 x 3 package. The device offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.

Features

Tape & Reel (TR) Package
WIDE BAND MEDIUM POWER RF/Microwave Amplifier
RF Type LTE, TDS-CDMA, W-CDMA
3V~5V voltage
390mA current

Surface Mount Mounting Type

Applications

There are a lot of NXP USA Inc.
MMZ25332BT1 RF Amplifiers applications.

• GPS
• GLONASS
• BeiDou
• Galileo
• Wireless communications
• ISM applications
• Wireless infrastructure
• Automated test equipment
• RF/IF gain control
• Microwave Radios