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BFU590QX

NXP BFU590QX

NPN12V8GHz

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NXP USA Inc.
BFU590QX
RF TRANS NPN 12V 8GHZ SOT89-3
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¥3.64

价格更新:一个月前

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产品详情

Overview

BFU580GX with pin details, that includes NPI Part Build_RF Transistors Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-261-4, TO-261AA, Technology is designed to work in Si, as well as the Surface Mount Mounting Type, the device can also be used as SOT-223 Supplier Device Package. In addition, the Configuration is Dual, the device is offered in 1W Power Max, the device has a NPN of Transistor Type, and Current Collector Ic Max is 60mA, and the Voltage Collector Emitter Breakdown Max is 12V, and DC Current Gain hFE Min Ic Vce is 60 @ 30mA, 8V, and the Frequency Transition is 11GHz, and Noise Figure dB Typ f is 1.4dB @ 1.8GHz, and the Gain is 10.5dB, and Pd Power Dissipation is 1000 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and the Operating Frequency is 900 MHz, and Collector Emitter Voltage VCEO Max is 16 V, and the Transistor Polarity is NPN, and Emitter Base Voltage VEBO is 2 V, and the Maximum DC Collector Current is 100 mA, and Continuous Collector Current is 30 mA, and the DC Collector Base Gain hfe Min is 60.

BFU590GX with circuit diagram, that includes 16 V Collector Emitter Voltage VCEO Max, they are designed to operate with a Dual Configuration, Continuous Collector Current is shown on datasheet note for use in a 80 mA, that offers Current Collector Ic Max features such as 200mA, DC Collector Base Gain hfe Min is designed to work in 60, as well as the 60 @ 80mA, 8V DC Current Gain hFE Min Ic Vce, the device can also be used as 2 V Emitter Base Voltage VEBO. In addition, the Frequency Transition is 8.5GHz, the device is offered in 8dB Gain, the device has a 300 mA of Maximum DC Collector Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and Mounting Type is Surface Mount, and the Mounting Style is SMD/SMT, and Operating Frequency is 900 MHz, and the Package Case is TO-261-4, TO-261AA, and Packaging is Digi-ReelR Alternate Packaging, and the Pd Power Dissipation is 2000 mW, and Power Max is 2W, and the Series is NPI Part Build_RF Transistors, and Supplier Device Package is SC-73, and the Technology is Si, and Transistor Polarity is NPN, and the Transistor Type is NPN, and Voltage Collector Emitter Breakdown Max is 12V.

Features

Tape & Reel (TR) Package
NPN Transistor Type
12V Voltage - Collector Emitter Breakdown (Max)
8GHz Frequency - Transition
6.5dB Gain
2W Power - Max
60 @ 80mA, 8V DC Current Gain (hFE) (Min) @ Ic, Vce
200mA Current - Collector (Ic) (Max)
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
晶体管类型: NPN
最大集电极-发射极击穿电压: 12V
频率 - 跃迁: 8GHz
增益: 6.5dB
最大功率: 2W
直流电流增益 (hFE) 最小值 @ Ic、Vce: 60 @ 80mA,8V
集电极电流 (Ic)(最大值): 200mA
工作温度: -40°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: TO-243AA
供应商器件封装: SOT-89-3
NXP USA Inc.

NXP USA Inc.

NXP USA Inc.是NXP Semiconductors在美国的子公司,负责设计、研发、制造和销售半导体产品。公司在德克萨斯州奥斯汀和亚利桑那州钱德勒设有晶圆制造设施,专注于为汽车、工业和通信市场提供高性能解决方案。

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