NXP BAS216,115

标准75 V250mA

Overview

The BAS2103WE6433HTMA1 is DIODE GEN PURP 200V 250MA SOD323, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a SC-76, SOD-323 Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Supplier Device Package features such as PG-SOD323-2, Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Standard Diode Type, the device can also be used as 100nA @ 200V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.25V @ 200mA, the device is offered in 200V Voltage DC Reverse Vr Max, the device has a 250mA (DC) of Current Average Rectified Io, and Reverse Recovery Time trr is 50ns, and the Capacitance Vr F is 5pF @ 0V, 1MHz, it has an Operating Temperature Junction range of 150°C (Max).

BAS216 with circuit diagram manufactured by NXP. The BAS216 is available in SOD110 Package, is part of the Diodes, Rectifiers - Single.

Features

Tape & Reel (TR) Package
Standard Technology
75 V Voltage - DC Reverse (Vr) (Max)
250mA Current - Average Rectified (Io)
1.25 V @ 150 mA Voltage - Forward (Vf) (Max) @ If
Fast Recovery =< 500ns, > 200mA (Io) Speed
4 ns Reverse Recovery Time (trr)
1 µA @ 75 V Current - Reverse Leakage @ Vr
1.5pF @ 0V, 1MHz Capacitance @ Vr, F
Surface Mount Mounting Type
150°C (Max) Operating Temperature - Junction