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BA278115

NXP BA278115

标准 - 单35V100 mA1.2pF @ 6V,1MHz700 毫欧 @ 2mA,100MHz715 mW-65°C ~ 150°C(TJ)

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NXP USA Inc.
BA278115
DIODE BAND-SWITCHING 35V SOD523
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价格更新:一个月前

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产品详情

Overview

The BA277,335 is DIODE BAND-SWITCHING 35V SOD523, that includes Tape & Reel (TR) Packaging, they are designed to operate with a SC-79, SOD-523 Package Case, Supplier Device Package is shown on datasheet note for use in a SOD-523, that offers Diode Type features such as Standard - Single, Voltage Peak Reverse Max is designed to work in 35V, as well as the 1.2pF @ 6V, 1MHz Capacitance Vr F, the device can also be used as 100mA Current Max. In addition, the Power Dissipation Max is 715mW.

BA278 with circuit diagram manufactured by NXP. The BA278 is available in SOD-523 Package, is part of the RF Diodes.

Features

Bulk Package

715 mW Power Dissipation (Max)

Applications


There are a lot of NXP USA Inc.
BA278,115 applications of RF diodes.

  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
产品属性
全选
包装: 散装
部件状态: 在售
二极管类型: 标准 - 单
最大峰值反向电压: 35V
电流 - 最大值: 100 mA
Vr 时的电容,F: 1.2pF @ 6V,1MHz
正向电流时的电阻,频率: 700 毫欧 @ 2mA,100MHz
最大功率耗散: 715 mW
工作温度: -65°C ~ 150°C(TJ)
封装/外壳: SC-79,SOD-523
供应商器件封装: SOD-523
NXP USA Inc.

NXP USA Inc.

NXP USA Inc.是NXP Semiconductors在美国的子公司,负责设计、研发、制造和销售半导体产品。公司在德克萨斯州奥斯汀和亚利桑那州钱德勒设有晶圆制造设施,专注于为汽车、工业和通信市场提供高性能解决方案。

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