Fairchild FDP86363_F085

N 通道80 V110A（Tc）4V @ 250µA300W（Tj）-55°C ~ 175°C（TJ）通孔

Overview

FDP8443_F085 with pin details, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 188 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 13.5 ns, and Rise Time is 17.9 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 80 A, and the Vds Drain Source Breakdown Voltage is 40 V, and Rds On Drain Source Resistance is 3.5 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 55 ns, and the Typical Turn On Delay Time is 18.4 ns, and Channel Mode is Enhancement.

FDP86363 with circuit diagram manufactured by FSC. The FDP86363 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 80V 110A TO-220.

Features

PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
80 V Drain to Source Voltage (Vdss)
110A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
2.8mOhm @ 80A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
150 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
10000 pF @ 40 V Input Capacitance (Ciss) (Max) @ Vds
300W (Tj) Power Dissipation (Max)
Through Hole Mounting Type