Fairchild FDMA6023PZT

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V3.6A60 毫欧 @ 3.6A，4.5V1.5V @ 250µA

Overview

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.

The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical sizeand is well suited to linear mode applications.

Features

Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A

Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A

Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A

Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A

Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin

HBM ESD protection level > 2.4 kV typical (Note 3)

RoHS Compliant

Free from halogenated compounds and antimony oxides

Applications

This product is general usage and suitable for many different applications.